Researchers from Rice University in Texas have developed a silicon oxide technology will allow manufacturers to fabricate resistive random-access memory (RRAM) devices at room temperature with conventional production methods. The concept behind resistive memory devices is the insertion of a dielectric material between two wires. When a sufficiently high voltage is applied across the wires, a narrow conduction path can be formed through the dielectric material. The presence or absence of these conduction pathways can be used to represent the binary value of digital data. The key to the new RRAM is its dielectric component, silicon oxide. It can be manufactured at room temperature, has an extremely low forming voltage, high on-off ratio, low power consumption, nine-bit capacity per cell, exceptional switching speeds and excellent cycling endurance.
Source: Rice University
